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TSDF72830YS
Vishay Semiconductors
Dual - MOSMIC(R)- two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching
Comments
MOSMIC - MOS Monolithic Integrated Circuit
VY
6
5
4
Description
The Dual-MOSMIC(R) TSDF72830YS, assembled in the well-known SOT-363 plastic package, is a combination of two different MOSMIC(R) amplifiers with common Source and common Gate 2 leads and an integrated switch. One of the MOSMIC stages is optimized for use in VHF applications, especially regarding cross modulation performance and noise figure at lower VHF frequencies, whereas the other stage is optimized for use in UHF applications regarding gain and noise figure performance at higher frequencies of UHF range. The integrated switch is operated by the Gate 1 bias of the UHF amplifier on Pin 3. All of the Gates are protected against excessive input voltage surges by integrated antiserial diodes between themselves and Source. Drain output pin of each stage is opposite to corresponding Gate 1 input pin what is called SOT-363L pin configuration with Vishay.
CW
WN7
2 3
18981
1
Electrostatic sensitive device. Observe precautions for handling
Applications
Low noise gain controlled VHF and UHF input stages with 5 V supply voltage, such as in digital and analog TV tuners and in other multimedia and communications equipment.
Typical Application
AGC C C 3
2
G2 (common)
RFC +5 V D 4 C UHF out
Features
* Two differently optimized amplifiers in a single package. One of them has a fully e3 internal self-biasing network on chip and the other has a partly integrated bias for easy Gate 1 switch-off with PNP switching transistors inside PLL -IC * Internal switch for saving lines on PCB layout as well as external components * Integrated gate protection diodes * Low noise figure, high gain * Typical forward transadmittance of 31 mS resp. 28 mS * Superior cross modulation at gain reduction * High AGC-range with soft slope * Main AGC control range from 3 V to 0.5 V * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
UHF in RG1 V GG
G1 AMP2
RFC +5 V 6 D C VHF out
VHF in
C
1 G1
AMP1
S (common)
5
V GG = 5 V: UHF AMP is on; VHF AMP is off V GG = 0 V: UHF AMP is off; VHF AMP is on (0 = shorted to Ground or open)
18982
Mechanical Data
Case: SOT-363L Plastic case Weight: approx. 6.0 mg V - Vishay Y - Year, is variable for digit from 0 to 9 (e.g. 3 = 2003, 4 = 2004) CW - Calendar Week, is variable for number from 01 to 52 Number of Calendar Week is always indicating place of pin 1 Pinning: 1 = Gate 1 (VHF amplifier), 2 = Gate 2 (common) 3 = Gate 1 (UHF amplifier), 4 = Drain (UHF amplifier), 5 = Source (common), 6 = Drain (VHF amplifier)
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Document Number 85176 Rev. 1.1, 02-May-05
TSDF72830YS
Vishay Semiconductors Parts Table
Part TSDF72830YS WN7 Marking SOT-363L Package
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1 (pin 1, 6, 2, 5) which is optimized for VHF applications Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Gate 1 - source voltage Total power dissipation Channel temperature Storage temperature range Tamb 60 C Test condition Symbol VDS ID IG1/G2SM + VG1 VG2SM - VG1SM Ptot TCh Tstg Value 8 30 10 6 1.5 200 150 - 55 to + 150 Unit V mA mA V V mW C C
Amplifier 2
Following data are valid for operating amplifier 2 (pin 3, 4, 2, 5) which is optimized for UHF applications Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Gate 1 - source voltage Total power dissipation Channel temperature Storage temperature range Tamb 60 C Test condition Symbol VDS ID IG1/G2SM + VG1/ VG2SM - VG1SM Ptot TCh Tstg Value 8 25 10 6 1.5 200 150 - 55 to + 150 Unit V mA mA V V mW C C
Maximum Thermal Resistance
Parameter Channel ambient
1) 1)
Test condition
Symbol RthChA
Value 450
Unit K/W
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu
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Document Number 85176 Rev. 1.1, 02-May-05
TSDF72830YS
Vishay Semiconductors Electrical DC Characteristics
Tamb = 25 C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1 (pin 1, 6, 2, 5) which is optimized for VHF applications Parameter Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Test condition Symbol Min 7 7 Typ. Max 10 10 50 20 8 0.3 13 17 1.2 Unit V V A nA mA V + IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS IG2S = 10 mA, VG1S = VDS = 0 V(BR)G2SS + IG1SS IG2SS IDSP VG2S(OFF)
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 Gate 2 - source leakage current VG2S = 5 V, VG1S = VDS = 0 Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, Gate 1 = nc Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, Gate 1 = nc, ID = 20 A
Amplifier 2
Following data are valid for operating amplifier 2 (pin 3, 4, 2, 5) which is optimized for UHF applications Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Test condition ID = 10 A, VG2S = VG1S = 0 Symbol V(BR)DSS Min 15 7 7 10 10 20 20 8 0.3 0.3 12 17 1.0 1.2 Typ. Max Unit V V V nA nA mA V V
+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS IG2S = 10 mA, VG1S = VDS = 0 V(BR)G2SS
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 Gate 2 - source leakage current VG2S = 5 V, VG1S = VDS = 0 Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 k Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 A VDS = VRG1 = 5 V, RG1 =100 k, ID = 20 A
+ IG1SS IG2SS IDSO VG1S(OFF) VG2S(OFF)
Document Number 85176 Rev. 1.1, 02-May-05
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TSDF72830YS
Vishay Semiconductors Electrical AC Characteristics
Tamb = 25 C, unless otherwise specified
Amplifier 1
VDS = VRG1 = 5 V, VG2S = 4 V, Gate 1 = nc, ID = IDSP, f = 1 MHz, Tamb = 25 C, unless otherwise specified Following data are valid for operating amplifier 1 (pin 1, 6, 2, 5) which is optimized for VHF applications Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power gain GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz GS = 2 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 400 MHz GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 800 MHz AGC range Noise figure VDS = 5 V, VG2S = 0.5 to 4 V, f = 200 MHz GS = GL = 20 mS, BS = BL = 0, f = 50 MHz GS = 2 mS, GL = 1 mS, BS = BSopt, f = 400 MHz GS = 3.3 mS, GL = 1 mS, BS = BSopt, f = 800 MHz Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Test condition Symbol |y21s| Cissg1 Crss Coss Gps Min 23 Typ. 28 2.2 20 1.0 32 Max 33 2.7 Unit mS pF fF pF dB
Gps
28
dB
Gps
22
dB
Gps F F F Xmod 90
50 4.0 1.0 1.5 6.0 1.6 2.3
dB dB dB dB dBV
Xmod
105
dBV
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Document Number 85176 Rev. 1.1, 02-May-05
TSDF72830YS
Vishay Semiconductors Amplifier 2
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 k, ID = IDSO, f = 1 MHz, Tamb = 25 C, unless otherwise specified Following data are valid for operating amplifier 2 (pin 3, 4, 2, 5) which is optimized for UHF applications Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power gain GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 400 MHz GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 800 MHz AGC range Noise figure VDS = 5 V, VG2S = 0.5 to 4 V, f = 800 MHz GS = GL = 20 mS, BS = BL = 0, f = 50 MHz GS = 2 mS, GL = 0.5 mS, BS = BSopt, f = 400 MHz GS = 3.3 mS, GL = 1 mS, BS = BSopt, f = 800 MHz Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Remark on improving intermodulation behavior: By setting RG1 smaller than 100 k, typical value of IDSO will raise and improved intermodulation behavior will be performed. Test condition Symbol |y21s| Cissg1 Crss Coss Gps Min 27 Typ. 31 1.7 20 0.9 33 Max 35 2.1 Unit mS pF fF pF dB
Gps
30
dB
Gps
25
dB
Gps F F F Xmod
40
50 5.0 1.0 1.3 7.0 1.5 2.0
dB dB dB dB dBV
90
Xmod
100
105
dBV
Document Number 85176 Rev. 1.1, 02-May-05
www.vishay.com 5
TSDF72830YS
Vishay Semiconductors Package Dimensions in mm (Inches)
0.10 (0.004) 1.00 (0.039) 0.80 (0.031) 10 2.20 (0.087) 1.80 (0.071) 0.25 (0.010) 0.10 (0.004)
ISO Method E
Mounting Pad Layout
0.35 (0.014)
1.15 (0.045)
2.20 (0.087) 2.00 (0.079)
1.35 (0.053)
1.60 (0.063)
0.30 (0.012) 0.20 (0.009) 0.65 (0.026) 1.3 (0.052)
0.65 (0.026) Ref.
0.90 (0.035)
1.30 (0.052) Ref.
14280
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Document Number 85176 Rev. 1.1, 02-May-05
TSDF72830YS
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85176 Rev. 1.1, 02-May-05
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